| Nr. | Part Name | Description | Manufacturer by |
| 28441 | 1SS119 | Diodes>Switching | Renesas |
| 28442 | 1SS120 | Small Signal | Hitachi Semiconductor |
| 28443 | 1SS120 | Diodes>Switching | Renesas |
| 28444 | 1SS123 | SILICON SWITCHING DIODE | NEC |
| 28445 | 1SS123-L | Silicon switching diode | NEC |
| 28446 | 1SS123-T1B | Silicon switching diode | NEC |
| 28447 | 1SS123-T2B | Silicon switching diode | NEC |
| 28448 | 1SS133 | Diodes > Switching Diodes > Leaded type | ROHM |
| 28449 | 1SS133 | SWITCHING DIODES | Leshan Radio Company |
| 28450 | 1SS139 | 1SS139 1SS140 1SS141 DIODE | ROHM |
| 28451 | 1SS139 | 1SS139 1SS140 1SS141 DIODE | ROHM |
| 28452 | 1SS140 | 1SS139 1SS140 1SS141 DIODE | ROHM |
| 28453 | 1SS140 | 1SS139 1SS140 1SS141 DIODE | ROHM |
| 28454 | 1SS141 | 1SS139 1SS140 1SS141 DIODE | ROHM |
| 28455 | 1SS141 | 1SS139 1SS140 1SS141 DIODE | ROHM |
| 28456 | 1SS154 | Diode Silicon Epitaxial Schottky Barrier Type UHF~S Band Mixer/Detector Applications | TOSHIBA |
| 28457 | 1SS176 | SWITCHING DIODES | Leshan Radio Company |
| 28458 | 1SS181 | Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application | TOSHIBA |
| 28459 | 1SS184 | Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application | TOSHIBA |
| 28460 | 1SS187 | Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application | TOSHIBA |
| 28461 | 1SS190 | Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application | TOSHIBA |
| 28462 | 1SS193 | Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application | TOSHIBA |
| 28463 | 1SS196 | Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application | TOSHIBA |
| 28464 | 1SS198 | Schottky Barrier Diodes for Detection and Mixer | Hitachi Semiconductor |
| 28465 | 1SS198 | Diodes>Switching | Renesas |
| 28466 | 1SS199 | Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching | Hitachi Semiconductor |
| 28467 | 1SS199MHD | Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching | Hitachi Semiconductor |
| 28468 | 1SS200 | Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application | TOSHIBA |
| 28469 | 1SS201 | Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application | TOSHIBA |
| 28470 | 1SS220 | Silicon switching diode | NEC |
| 28471 | 1SS220-L | Silicon switching diode | NEC |
| 28472 | 1SS220-T1B | Silicon switching diode | NEC |
| 28473 | 1SS220-T2B | Silicon switching diode | NEC |
| 28474 | 1SS221 | Silicon switching diode | NEC |
| 28475 | 1SS221-L | Silicon switching diode | NEC |
| 28476 | 1SS221-T1B | Silicon switching diode | NEC |
| 28477 | 1SS221-T2B | Silicon switching diode | NEC |
| 28478 | 1SS222 | Silicon switching diode | NEC |
| 28479 | 1SS222-L | Silicon switching diode | NEC |
| 28480 | 1SS222-T1B | Silicon switching diode | NEC |
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