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Datasheets found :: 1675338
Page: << | 6925 | 6926 | 6927 | 6928 | 6929 | 6930 | 6931 | 6932 | 6933 | 6934 | 6935 | >>
No.Part NameDescriptionManufacturer
277161BCR166L3E6327Digital Transistors - R1= 4,7 kOhm ; R2= 47 kOhmInfineon
277162BCR166TSingle digital (complex) AF-Transistors in SC75 packageInfineon
277163BCR166TE6327Digital Transistors - R1=4,7 kOhm R2=47 kOhmInfineon
277164BCR166WDigital Transistors - R1= 4,7 kOhm ; R2= 47 kOhmInfineon
277165BCR166WPNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)Siemens
277166BCR169Digital Transistors - R1= 4,7 kOhmInfineon
277167BCR169PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)Siemens
277168BCR169FSingle digital (Built-In Resistor) AF-Transistors in TSFP-3 PackageInfineon
277169BCR169FE6327Digital Transistors - R1= 4,7 kOhmInfineon
277170BCR169L3Single digital (Built-In Resistor) AF-Transistors in TSLP-3 PackageInfineon
277171BCR169L3E6327Digital Transistors - R1= 4,7 kOhmInfineon
277172BCR169SDigital Transistors - SOT363 packageInfineon
277173BCR169SPNP Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit)Siemens
277174BCR169TSingle digital (complex) AF-Transistors in SC75 packageInfineon
277175BCR169TE6327Digital Transistors - R1=4,7 kOhmInfineon
277176BCR169UDigital Transistors - SC74 packageInfineon
277177BCR169WDigital Transistors - R1= 4,7 kOhmInfineon
277178BCR169WPNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)Siemens
277179BCR16AMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE A, B, C : NON-INSULATED TYPE E : INSULATED TYPEMitsubishi Electric Corporation


277180BCR16BMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE A, B, C : NON-INSULATED TYPE E : INSULATED TYPEMitsubishi Electric Corporation
277181BCR16CMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE A, B, C : NON-INSULATED TYPE E : INSULATED TYPEMitsubishi Electric Corporation
277182BCR16CMMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPEMitsubishi Electric Corporation
277183BCR16CMIntegrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
277184BCR16CMTriac 16 Amperes/400-600 VoltsPowerex Power Semiconductors
277185BCR16CM-12Triac 16 Amperes/400-600 VoltsPowerex Power Semiconductors
277186BCR16CM-12LTriac 16 Amperes/400-600 VoltsPowerex Power Semiconductors
277187BCR16CM-8Triac 16 Amperes/400-600 VoltsPowerex Power Semiconductors
277188BCR16CM-8LTriac 16 Amperes/400-600 VoltsPowerex Power Semiconductors
277189BCR16CSMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPEMitsubishi Electric Corporation
277190BCR16CSIntegrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
277191BCR16CSMEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPEPowerex Power Semiconductors
277192BCR16EMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE A, B, C : NON-INSULATED TYPE E : INSULATED TYPEMitsubishi Electric Corporation
277193BCR16HMMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPEMitsubishi Electric Corporation
277194BCR16PMMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPEMitsubishi Electric Corporation
277195BCR16PMIsolated Triac 16 Amperes/400-600 VoltsPowerex Power Semiconductors
277196BCR16PM-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
277197BCR16PM-12Isolated Triac 16 Amperes/400-600 VoltsPowerex Power Semiconductors
277198BCR16PM-12LIsolated Triac 16 Amperes/400-600 VoltsPowerex Power Semiconductors
277199BCR16PM-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
277200BCR16PM-8Isolated Triac 16 Amperes/400-600 VoltsPowerex Power Semiconductors


Datasheets found :: 1675338
Page: << | 6925 | 6926 | 6927 | 6928 | 6929 | 6930 | 6931 | 6932 | 6933 | 6934 | 6935 | >>

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