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Datasheets found :: 1567829
Page: << | 6835 | 6836 | 6837 | 6838 | 6839 | 6840 | 6841 | 6842 | 6843 | 6844 | 6845 | >>
No.Part NameDescriptionManufacturer
273561BCR30AM-12Triac 30 Ampere/400-600 VoltsPowerex Power Semiconductors
273562BCR30AM-12LTriac 30 Ampere/400-600 VoltsPowerex Power Semiconductors
273563BCR30AM-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
273564BCR30AM-8Triac 30 Ampere/400-600 VoltsPowerex Power Semiconductors
273565BCR30AM-8LTriac 30 Ampere/400-600 VoltsPowerex Power Semiconductors
273566BCR30GMMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPEMitsubishi Electric Corporation
273567BCR35NPN/PNP Silicon Digital Tansistor Array (Switching circuit/ inverter/ interface circuit/ drive circuit)Siemens
273568BCR35PNDigital Transistors - SOT363 packageInfineon
273569BCR35PNNPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit)Siemens
273570BCR39NPN/PNP Silicon Digital Transistor ArrayInfineon
273571BCR39PNNPN/PNP Silicon Digital Transistor ArrayInfineon
273572BCR3AMMITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPEMitsubishi Electric Corporation
273573BCR3AMTriac 3 Amperes/400-600 VoltsPowerex Power Semiconductors
273574BCR3AM-12Triac 3 Amperes/400-600 VoltsPowerex Power Semiconductors
273575BCR3AM-8Triac 3 Amperes/400-600 VoltsPowerex Power Semiconductors
273576BCR3ASMITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPEMitsubishi Electric Corporation
273577BCR3ASLOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPEPowerex Power Semiconductors
273578BCR3AS-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
273579BCR3AS-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation


273580BCR3KMMITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPEMitsubishi Electric Corporation
273581BCR3KM-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
273582BCR3KM-14MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPEMitsubishi Electric Corporation
273583BCR3KM-14Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
273584BCR3KM-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
273585BCR3PMMITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPEMitsubishi Electric Corporation
273586BCR3PM-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
273587BCR3PM-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
273588BCR400Application Considerations for the Integrated Bias Control CircuitsInfineon
273589BCR400RActive Bias Controller (AF SSIC)Infineon
273590BCR400RActive Bias Controller (Supplies stable bias current even at low battery voltage and extreme ambient temperature variation)Siemens
273591BCR400WAnalog Silicon SSICs - Low voltage drop of 0.7VInfineon
273592BCR400WActive Bias Controller (AF SSIC)Infineon
273593BCR400WActive Bias Controller (Supplies stable bias current even at low battery voltage and extreme ambient temperature variation)Siemens
273594BCR401LED Driver(Supplies stable bias current even at low battery voltage)Infineon
273595BCR401RAnalog Silicon SSICs - output current: 10..60mAInfineon
273596BCR402Light Emitting Diode (LED) Driver IC Provides Constant LED Current Independent of Supply Voltage VariationInfineon
273597BCR402RAnalog Silicon SSICs - output current: 20..60mAInfineon
273598BCR402UAnalog Silicon SSICs - LED Driver in SC74Infineon
273599BCR405USSIC Constant Current Sources for driving LEDsInfineon
273600BCR410Active Bias ControllerInfineon


Datasheets found :: 1567829
Page: << | 6835 | 6836 | 6837 | 6838 | 6839 | 6840 | 6841 | 6842 | 6843 | 6844 | 6845 | >>

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