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Datasheets found :: 1567829
Page: << | 6827 | 6828 | 6829 | 6830 | 6831 | 6832 | 6833 | 6834 | 6835 | 6836 | 6837 | >>
No.Part NameDescriptionManufacturer
273241BCR12CM-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
273242BCR12CM-12Triac 12 Amperes/400-600 VoltsPowerex Power Semiconductors
273243BCR12CM-12LTriac 12 Amperes/400-600 VoltsPowerex Power Semiconductors
273244BCR12CM-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
273245BCR12CM-8Triac 12 Amperes/400-600 VoltsPowerex Power Semiconductors
273246BCR12CM-8LTriac 12 Amperes/400-600 VoltsPowerex Power Semiconductors
273247BCR12CSMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPEMitsubishi Electric Corporation
273248BCR12CSMEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPEPowerex Power Semiconductors
273249BCR12CS-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
273250BCR12CS-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
273251BCR12KM-14MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPEMitsubishi Electric Corporation
273252BCR12PMMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPEMitsubishi Electric Corporation
273253BCR12PMIsolated Triac 12 Amperes/400-600 VoltsPowerex Power Semiconductors
273254BCR12PM-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
273255BCR12PM-12Isolated Triac 12 Amperes/400-600 VoltsPowerex Power Semiconductors
273256BCR12PM-12LIsolated Triac 12 Amperes/400-600 VoltsPowerex Power Semiconductors
273257BCR12PM-14MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPEMitsubishi Electric Corporation
273258BCR12PM-14Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
273259BCR12PM-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation


273260BCR12PM-8Isolated Triac 12 Amperes/400-600 VoltsPowerex Power Semiconductors
273261BCR12PM-8LIsolated Triac 12 Amperes/400-600 VoltsPowerex Power Semiconductors
273262BCR12UMMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPEMitsubishi Electric Corporation
273263BCR133Digital Transistors - R1=10 kOhm; R2=10 kOhmInfineon
273264BCR133NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)Siemens
273265BCR133FSingle digital (Built-In Resistor) AF-Transistors in TSFP-3 PackageInfineon
273266BCR133FE6327Digital Transistors - R1= 10 kOhm ; R2= 10 kOhmInfineon
273267BCR133L3Single digital (Built-In Resistor) AF-Transistors in TSLP-3 PackageInfineon
273268BCR133L3E6327Digital Transistors - R1= 10 kOhm ; R2= 10 kOhmInfineon
273269BCR133SDigital Transistors - R1= 10 kOhm ; R2= 10 kOhm SOT363Infineon
273270BCR133SNPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit)Siemens
273271BCR133TDigital Transistors - R1= 10 kOhm ; R2= 10 kOhmInfineon
273272BCR133UDigital Transistors - R1= 10 kOhm ; R2= 10 kOhm SC74Infineon
273273BCR133WDigital Transistors - R1=10 kOhm; R2=10 kOhmInfineon
273274BCR133WNPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)Siemens
273275BCR135Digital Transistors - R1= 10 kOhm ; R2= 47 kOhmInfineon
273276BCR135NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)Siemens
273277BCR135FSingle digital (Built-In Resistor) AF-Transistors in TSFP-3 PackageInfineon
273278BCR135FE6327Digital Transistors - R1= 10 kOhm ; R2= 47 kOhmInfineon
273279BCR135L3Single digital (Built-In Resistor) AF-Transistors in TSLP-3 PackageInfineon
273280BCR135L3E6327Digital Transistors - R1= 10 kOhm ; R2= 47 kOhmInfineon


Datasheets found :: 1567829
Page: << | 6827 | 6828 | 6829 | 6830 | 6831 | 6832 | 6833 | 6834 | 6835 | 6836 | 6837 | >>

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