DatasheetCatalog.com Logo
  |   Home   |   All manufacturers   |   By Category   |  
Russian version Versão portuguese Versione italiana
Versión española Deutsche Version Version française

   
Quick jump to:   1N  2N  2SA  2SC  74  AD  BA  BC  BD  BF  BU  CXA  HCF  IRF  KA  KIA  LA  LM  MC  NE  ST  STK  TDA  TL  UA
  LM317   LM339   MAX232   NE555   LM324   8051   7805   2N3055   LM358   2N2222   74LS138   TDA7294   TL431   IRF540   1N4148   G45A


Datasheets found :: 1567829
Page: << | 6825 | 6826 | 6827 | 6828 | 6829 | 6830 | 6831 | 6832 | 6833 | 6834 | 6835 | >>
No.Part NameDescriptionManufacturer
273161BCR108TSingle digital (complex) AF-Transistors in SC75 packageInfineon
273162BCR108TE6327Digital Transistors - R1= 2,2kOhm; R2= 47kOhmInfineon
273163BCR108WSingle digital (complex) AF-Transistors in SOT323 packageInfineon
273164BCR108WNPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)Siemens
273165BCR108WE6327Digital Transistors - R1=2.2 kOhm; R2=47 kOhmInfineon
273166BCR10CMMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPEMitsubishi Electric Corporation
273167BCR10CMTriac 10 Amperes/400-600 VoltsPowerex Power Semiconductors
273168BCR10CM-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
273169BCR10CM-12Triac 10 Amperes/400-600 VoltsPowerex Power Semiconductors
273170BCR10CM-12LTriac 10 Amperes/400-600 VoltsPowerex Power Semiconductors
273171BCR10CM-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
273172BCR10CM-8Triac 10 Amperes/400-600 VoltsPowerex Power Semiconductors
273173BCR10CM-8LTriac 10 Amperes/400-600 VoltsPowerex Power Semiconductors
273174BCR10CSMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPEMitsubishi Electric Corporation
273175BCR10CSIntegrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
273176BCR10CSMEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPEPowerex Power Semiconductors
273177BCR10PMMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPEMitsubishi Electric Corporation
273178BCR10PMIntegrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
273179BCR10PMIsolated Triac 10 Amperes/400-600 VoltsPowerex Power Semiconductors


273180BCR10PM-12Isolated Triac 10 Amperes/400-600 VoltsPowerex Power Semiconductors
273181BCR10PM-12LIsolated Triac 10 Amperes/400-600 VoltsPowerex Power Semiconductors
273182BCR10PM-8Isolated Triac 10 Amperes/400-600 VoltsPowerex Power Semiconductors
273183BCR10PM-8LIsolated Triac 10 Amperes/400-600 VoltsPowerex Power Semiconductors
273184BCR10PNDigital Transistors - SOT363 packageInfineon
273185BCR10PNNPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit)Siemens
273186BCR10UMMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPEMitsubishi Electric Corporation
273187BCR112Digital Transistors - R1=4.7 kOhm; R2=4.7 kOhmInfineon
273188BCR112NPN Silicon Digital Transistor (Switching circuit, inverter, inferface circuit, driver circuit)Siemens
273189BCR112FSingle digital (Built-In Resistor) AF-Transistors in TSFP-3 PackageInfineon
273190BCR112FE6327Digital Transistors - R1= 4,7 kOhm ; R2= 4,7 kOhmInfineon
273191BCR112L3Single digital (Built-In Resistor) AF-Transistors in TSLP-3 PackageInfineon
273192BCR112L3E6327Digital Transistors - R1= 4,7 kOhm ; R2= 4,7 kOhmInfineon
273193BCR112TSingle digital (complex) AF-Transistors in SC75 packageInfineon
273194BCR112TE6327Digital Transistors - R1=4.7 kOhm; R2=4.7 kOhmInfineon
273195BCR112UNPN Silicon Digital TransistorInfineon
273196BCR112WDigital Transistors - R1=4.7 kOhm; R2=4.7 kOhmInfineon
273197BCR112WNPN Silicon Digital Transistor (Switching circuit, inverter, inferface circuit, driver circuit)Siemens
273198BCR114NPN Silicon Digital TransistorInfineon
273199BCR114FSingle digital (Built-In Resistor) AF-Transistors in TSFP-3 PackageInfineon
273200BCR114FE6327Digital Transistors - R1= 4,7 kOhm ; R2= 10 kOhmInfineon


Datasheets found :: 1567829
Page: << | 6825 | 6826 | 6827 | 6828 | 6829 | 6830 | 6831 | 6832 | 6833 | 6834 | 6835 | >>

Version française pour cette page Deutsche Version für diese Seite Versión española para esta página Versione italiana per questa pagina Versão portuguese para esta página Russian version Romanian version


© 2019    www.datasheetcatalog.com