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Datasheets found :: 1675338
Page: << | 6814 | 6815 | 6816 | 6817 | 6818 | 6819 | 6820 | 6821 | 6822 | 6823 | 6824 | >>
No.Part NameDescriptionManufacturer
272721BC237CBUNPN Epitaxial Silicon TransistorFairchild Semiconductor
272722BC237CTANPN Epitaxial Silicon TransistorFairchild Semiconductor
272723BC237TFNPN Epitaxial Silicon TransistorFairchild Semiconductor
272724BC237TFRNPN Epitaxial Silicon TransistorFairchild Semiconductor
272725BC238 0.350W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 120 - 800 hFEContinental Device India Limited
272726BC238Switching and Amplifier ApplicationsFairchild Semiconductor
272727BC238General Purpose TransistorKorea Electronics (KEC)
272728BC238NPN SILICON PLANAR EPITAXIAL TRANSISTORMicro Electronics
272729BC238Tranzystor małej częstotliwości małej mocyUltra CEMI
272730BC238Tranzystor krzemowy małej mocy, małej częstotliwościUltra CEMI
272731BC238Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA.USHA India LTD
272732BC238A 0.350W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 120 - 220 hFEContinental Device India Limited
272733BC238ANPN Epitaxial Silicon TransistorFairchild Semiconductor
272734BC238ABUNPN Epitaxial Silicon TransistorFairchild Semiconductor
272735BC238ATANPN Epitaxial Silicon TransistorFairchild Semiconductor
272736BC238ATFNPN Epitaxial Silicon TransistorFairchild Semiconductor
272737BC238ATFRNPN Epitaxial Silicon TransistorFairchild Semiconductor
272738BC238B 0.350W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 200 - 460 hFEContinental Device India Limited
272739BC238BAmplifier TransistorsMotorola


272740BC238BBUNPN Epitaxial Silicon TransistorFairchild Semiconductor
272741BC238BTANPN Epitaxial Silicon TransistorFairchild Semiconductor
272742BC238BUNPN Epitaxial Silicon TransistorFairchild Semiconductor
272743BC238C 0.350W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 380 - 800 hFEContinental Device India Limited
272744BC238CAmplifier TransistorsMotorola
272745BC238CAmplifier Transistor NPNON Semiconductor
272746BC238CBUNPN Epitaxial Silicon TransistorFairchild Semiconductor
272747BC238CTANPN Epitaxial Silicon TransistorFairchild Semiconductor
272748BC238TARNPN Epitaxial Silicon TransistorFairchild Semiconductor
272749BC238TFNPN Epitaxial Silicon TransistorFairchild Semiconductor
272750BC238TFRNPN Epitaxial Silicon TransistorFairchild Semiconductor
272751BC239 0.350W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 120 - 800 hFEContinental Device India Limited
272752BC239Switching and Amplifier ApplicationsFairchild Semiconductor
272753BC239General Purpose TransistorKorea Electronics (KEC)
272754BC239NPN SILICON PLANAR EPITAXIAL TRANSISTORMicro Electronics
272755BC239Amplifier TransistorsMotorola
272756BC239Tranzystor małej częstotliwości małej mocyUltra CEMI
272757BC239Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA.USHA India LTD
272758BC239ABUNPN Epitaxial Silicon TransistorFairchild Semiconductor
272759BC239ATANPN Epitaxial Silicon TransistorFairchild Semiconductor
272760BC239B 0.350W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 200 - 460 hFEContinental Device India Limited


Datasheets found :: 1675338
Page: << | 6814 | 6815 | 6816 | 6817 | 6818 | 6819 | 6820 | 6821 | 6822 | 6823 | 6824 | >>

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