|   Home   |   All manufacturers   |   By Category   |  

Part name, description or manufacturer contain:    
Quick jump to:   1N  2N  2SA  2SC  74  AD  BA  BC  BD  BF  BU  CXA  HCF  IRF  KA  KIA  LA  LM  MC  NE  ST  STK  TDA  TL  UA  
  LM317   LM339   MAX232   NE555   LM324   8051   7805   2N3055   LM358   2N2222   74LS138   TDA7294   TL431   IRF540   1N4148   AD590



Datasheets found :: 1351361Page: << | 6401 | 6402 | 6403 | 6404 | 6405 | 6406 | 6407 | 6408 | 6409 | 6410 | 6411 | >>
Nr.Part NameDescriptionManufacturer by
256201BD241COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORSSBoca Semiconductor Corporation
256202BD241NPN SILICON POWER TRANSISTORTRSYS
256203BD241Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 55V, 40W.General Electric Solid State
256204BD24155 V, NPN silicon power transistorTRANSYS Electronics Limited
256205BD241ANPN Epitaxial Silicon TransistorFairchild Semiconductor
256206BD241ACOMPLEMENTARY SILICON POWER TRANSISTORSST Microelectronics
256207BD241ANPN SILICON EPITAXIAL BASE POWER TRANSISTORSMicro Electronics
256208BD241ANPN SILICON POWER TRANSISTORSPower Innovations
256209BD241ACOMPLEMENTARY SILICON POWER TRANSISTORSSGS Thomson Microelectronics
256210BD241ACOMPLEMENTARY SILICON POWER TRANSISTORSSGS Thomson Microelectronics
256211BD241APOWER TRANSISTORS(3A,40W)MOSPEC Semiconductor
256212BD241ACOMPLEMENTARY SILICON PLASTIC POWER TRANSISTORSSBoca Semiconductor Corporation
256213BD241ANPN SILICON POWER TRANSISTORTRSYS
256214BD241AEpitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 70V, 40W.General Electric Solid State
256215BD241A70 V, NPN silicon power transistorTRANSYS Electronics Limited
256216BD241ANPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40WUSHA India LTD
256217BD241ATUNPN Epitaxial Silicon TransistorFairchild Semiconductor
256218BD241BNPN Epitaxial Silicon TransistorFairchild Semiconductor



256219BD241BCOMPLEMENTARY SILICON POWER TRANSISTORSST Microelectronics
256220BD241BNPN SILICON EPITAXIAL BASE POWER TRANSISTORSMicro Electronics
256221BD241BNPN SILICON POWER TRANSISTORSPower Innovations
256222BD241BCOMPLEMENTARY SILICON POWER TRANSISTORSSGS Thomson Microelectronics
256223BD241BCOMPLEMENTARY SILICON POWER TRANSISTORSSGS Thomson Microelectronics
256224BD241BPOWER TRANSISTORS(3A,40W)MOSPEC Semiconductor
256225BD241BCOMPLEMENTARY SILICON PLASTIC POWER TRANSISTORSSBoca Semiconductor Corporation
256226BD241BComplementary Silicon Plastic Power TransistorsMotorola
256227BD241BPOWER TRANSISTORS COMPLEMENTARY SILICONON Semiconductor
256228BD241BNPN SILICON POWER TRANSISTORTRSYS
256229BD241BEpitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 90V, 40W.General Electric Solid State
256230BD241B90 V, NPN silicon power transistorTRANSYS Electronics Limited
256231BD241BNPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40WUSHA India LTD
256232BD241BFPCOMPLEMENTARY SILICON POWER TRANSISTORSST Microelectronics
256233BD241BFPCOMPLEMENTARY SILICON POWER TRANSISTORSSGS Thomson Microelectronics
256234BD241BFPCOMPLEMENTARY SILICON POWER TRANSISTORSSGS Thomson Microelectronics
256235BD241BTUNPN Epitaxial Silicon TransistorFairchild Semiconductor
256236BD241CNPN Epitaxial Silicon TransistorFairchild Semiconductor
256237BD241CCOMPLEMENTARY SILICON POWER TRANSISTORSST Microelectronics
256238BD241CNPN SILICON POWER TRANSISTORSPower Innovations
256239BD241CCOMPLEMENTARY SILICON POWER TRANSISTORSSGS Thomson Microelectronics
256240BD241CCOMPLEMENTARY SILICON POWER TRANSISTORSSGS Thomson Microelectronics



Datasheets found :: 1351361Page: << | 6401 | 6402 | 6403 | 6404 | 6405 | 6406 | 6407 | 6408 | 6409 | 6410 | 6411 | >>
Version française pour cette page Deutsche Version für diese Seite Versión española para esta página Versione italiana per questa pagina Versão portuguese para esta página Russian version Romanian version



© 2018 - www Datasheet Catalog net