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Datasheets found :: 1351361Page: << | 6337 | 6338 | 6339 | 6340 | 6341 | 6342 | 6343 | 6344 | 6345 | 6346 | 6347 | >>
Nr.Part NameDescriptionManufacturer by
253641BCR108L3E6327Digital Transistors - R1= 2,2 kOhm ; R2= 47 kOhmInfineon
253642BCR108SNPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit)Siemens
253643BCR108SNPN Silicon Digital TransistorInfineon
253644BCR108S E6327Dual Built-in Resistor AF Transistors; 2xNPN; Industrial Standars Types, Icmax of 100mA; Vceo of 50VInfineon
253645BCR108SE6327Digital Transistors - R1= 2,2 kOhm ; R2= 47 kOhm SOT363Infineon
253646BCR108TSingle digital (complex) AF-Transistors in SC75 packageInfineon
253647BCR108TE6327Digital Transistors - R1= 2,2kOhm; R2= 47kOhmInfineon
253648BCR108WNPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)Siemens
253649BCR108WSingle digital (complex) AF-Transistors in SOT323 packageInfineon
253650BCR108WE6327Digital Transistors - R1=2.2 kOhm; R2=47 kOhmInfineon
253651BCR10CMMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPEMitsubishi Electric Corporation
253652BCR10CMTriac 10 Amperes/400-600 VoltsPowerex Power Semiconductors
253653BCR10CM-12Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
253654BCR10CM-12Triac 10 Amperes/400-600 VoltsPowerex Power Semiconductors
253655BCR10CM-12LTriac 10 Amperes/400-600 VoltsPowerex Power Semiconductors
253656BCR10CM-8Integrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
253657BCR10CM-8Triac 10 Amperes/400-600 VoltsPowerex Power Semiconductors
253658BCR10CM-8LTriac 10 Amperes/400-600 VoltsPowerex Power Semiconductors
253659BCR10CSIntegrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation



253660BCR10CSMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPEMitsubishi Electric Corporation
253661BCR10CSMEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPEPowerex Power Semiconductors
253662BCR10PMIntegrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
253663BCR10PMMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPEMitsubishi Electric Corporation
253664BCR10PMIsolated Triac 10 Amperes/400-600 VoltsPowerex Power Semiconductors
253665BCR10PM-12Isolated Triac 10 Amperes/400-600 VoltsPowerex Power Semiconductors
253666BCR10PM-12LIsolated Triac 10 Amperes/400-600 VoltsPowerex Power Semiconductors
253667BCR10PM-8Isolated Triac 10 Amperes/400-600 VoltsPowerex Power Semiconductors
253668BCR10PM-8LIsolated Triac 10 Amperes/400-600 VoltsPowerex Power Semiconductors
253669BCR10PNDigital Transistors - SOT363 packageInfineon
253670BCR10PNNPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit)Siemens
253671BCR10UMMITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPEMitsubishi Electric Corporation
253672BCR112Digital Transistors - R1=4.7 kOhm; R2=4.7 kOhmInfineon
253673BCR112NPN Silicon Digital Transistor (Switching circuit, inverter, inferface circuit, driver circuit)Siemens
253674BCR112FSingle digital (Built-In Resistor) AF-Transistors in TSFP-3 PackageInfineon
253675BCR112FE6327Digital Transistors - R1= 4,7 kOhm ; R2= 4,7 kOhmInfineon
253676BCR112L3Single digital (Built-In Resistor) AF-Transistors in TSLP-3 PackageInfineon
253677BCR112L3E6327Digital Transistors - R1= 4,7 kOhm ; R2= 4,7 kOhmInfineon
253678BCR112TSingle digital (complex) AF-Transistors in SC75 packageInfineon
253679BCR112TE6327Digital Transistors - R1=4.7 kOhm; R2=4.7 kOhmInfineon
253680BCR112UNPN Silicon Digital TransistorInfineon



Datasheets found :: 1351361Page: << | 6337 | 6338 | 6339 | 6340 | 6341 | 6342 | 6343 | 6344 | 6345 | 6346 | 6347 | >>
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