| Nr. | Part Name | Description | Manufacturer by |
| 253641 | BCR108L3E6327 | Digital Transistors - R1= 2,2 kOhm ; R2= 47 kOhm | Infineon |
| 253642 | BCR108S | NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit) | Siemens |
| 253643 | BCR108S | NPN Silicon Digital Transistor | Infineon |
| 253644 | BCR108S E6327 | Dual Built-in Resistor AF Transistors; 2xNPN; Industrial Standars Types, Icmax of 100mA; Vceo of 50V | Infineon |
| 253645 | BCR108SE6327 | Digital Transistors - R1= 2,2 kOhm ; R2= 47 kOhm SOT363 | Infineon |
| 253646 | BCR108T | Single digital (complex) AF-Transistors in SC75 package | Infineon |
| 253647 | BCR108TE6327 | Digital Transistors - R1= 2,2kOhm; R2= 47kOhm | Infineon |
| 253648 | BCR108W | NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) | Siemens |
| 253649 | BCR108W | Single digital (complex) AF-Transistors in SOT323 package | Infineon |
| 253650 | BCR108WE6327 | Digital Transistors - R1=2.2 kOhm; R2=47 kOhm | Infineon |
| 253651 | BCR10CM | MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE | Mitsubishi Electric Corporation |
| 253652 | BCR10CM | Triac 10 Amperes/400-600 Volts | Powerex Power Semiconductors |
| 253653 | BCR10CM-12 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V | Mitsubishi Electric Corporation |
| 253654 | BCR10CM-12 | Triac 10 Amperes/400-600 Volts | Powerex Power Semiconductors |
| 253655 | BCR10CM-12L | Triac 10 Amperes/400-600 Volts | Powerex Power Semiconductors |
| 253656 | BCR10CM-8 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V | Mitsubishi Electric Corporation |
| 253657 | BCR10CM-8 | Triac 10 Amperes/400-600 Volts | Powerex Power Semiconductors |
| 253658 | BCR10CM-8L | Triac 10 Amperes/400-600 Volts | Powerex Power Semiconductors |
| 253659 | BCR10CS | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V | Mitsubishi Electric Corporation |
| 253660 | BCR10CS | MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE | Mitsubishi Electric Corporation |
| 253661 | BCR10CS | MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE | Powerex Power Semiconductors |
| 253662 | BCR10PM | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V | Mitsubishi Electric Corporation |
| 253663 | BCR10PM | MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE | Mitsubishi Electric Corporation |
| 253664 | BCR10PM | Isolated Triac 10 Amperes/400-600 Volts | Powerex Power Semiconductors |
| 253665 | BCR10PM-12 | Isolated Triac 10 Amperes/400-600 Volts | Powerex Power Semiconductors |
| 253666 | BCR10PM-12L | Isolated Triac 10 Amperes/400-600 Volts | Powerex Power Semiconductors |
| 253667 | BCR10PM-8 | Isolated Triac 10 Amperes/400-600 Volts | Powerex Power Semiconductors |
| 253668 | BCR10PM-8L | Isolated Triac 10 Amperes/400-600 Volts | Powerex Power Semiconductors |
| 253669 | BCR10PN | Digital Transistors - SOT363 package | Infineon |
| 253670 | BCR10PN | NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit) | Siemens |
| 253671 | BCR10UM | MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE | Mitsubishi Electric Corporation |
| 253672 | BCR112 | Digital Transistors - R1=4.7 kOhm; R2=4.7 kOhm | Infineon |
| 253673 | BCR112 | NPN Silicon Digital Transistor (Switching circuit, inverter, inferface circuit, driver circuit) | Siemens |
| 253674 | BCR112F | Single digital (Built-In Resistor) AF-Transistors in TSFP-3 Package | Infineon |
| 253675 | BCR112FE6327 | Digital Transistors - R1= 4,7 kOhm ; R2= 4,7 kOhm | Infineon |
| 253676 | BCR112L3 | Single digital (Built-In Resistor) AF-Transistors in TSLP-3 Package | Infineon |
| 253677 | BCR112L3E6327 | Digital Transistors - R1= 4,7 kOhm ; R2= 4,7 kOhm | Infineon |
| 253678 | BCR112T | Single digital (complex) AF-Transistors in SC75 package | Infineon |
| 253679 | BCR112TE6327 | Digital Transistors - R1=4.7 kOhm; R2=4.7 kOhm | Infineon |
| 253680 | BCR112U | NPN Silicon Digital Transistor | Infineon |
| | | |
