| Nr. | Part Name | Description | Manufacturer by |
| 253601 | BCP72M | PNP Silicon AF Power Transistor | Infineon |
| 253602 | BCP72M | PNP Silicon AF Power Transistor (Drain switch for RF power amplifier stages For AF driver and output stages High collector current) | Siemens |
| 253603 | BCP75W | 5V and 3.3V, "Half-Brick" 75 Watt, DC/DC Converters | Datel |
| 253604 | BCP75W | 5V and 3.3V, "Half-Brick" 75 Watt, DC/DC Converters | Datel |
| 253605 | BCP75W | 5V and 3.3V, "Half-Brick" 75 Watt, DC/DC Converters | Datel |
| 253606 | BCR | 20 x 20 Ta2 N Back-Contact on Silicon | Vishay |
| 253607 | BCR 119 | Single AF Transistors for General Purpose Applications | Infineon |
| 253608 | BCR 196 | Single digital (complex) AF-Transistors in SOT23 package | Infineon |
| 253609 | BCR 196W | Single digital (complex) AF-Transistors in SOT323 package | Infineon |
| 253610 | BCR08AM-14 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V | Mitsubishi Electric Corporation |
| 253611 | BCR08AM-14 | MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE PLANAR PASSIVATION TYPE | Mitsubishi Electric Corporation |
| 253612 | BCR08AS | LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE | Powerex Power Semiconductors |
| 253613 | BCR08AS-8 | Integrated Gate Bipolar Transistor (IGBT) Modules: 250V | Mitsubishi Electric Corporation |
| 253614 | BCR08AS-8 | MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE | Mitsubishi Electric Corporation |
| 253615 | BCR08AS-8 | LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE | Powerex Power Semiconductors |
| 253616 | BCR08PN | Digital Transistors - SOT363 package | Infineon |
| 253617 | BCR08PN | NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit) | Siemens |
| 253618 | BCR10 | NPN/PNP Silicon Digital Transistor Array | Infineon |
| 253619 | BCR10 | NPN/PNP Silicon Digital Tansistor Array (Switching circuit/ inverter/ interface circuit/ drive circuit) | Siemens |
| 253620 | BCR101 | NPN Silicon Digital Transistor | Infineon |
| 253621 | BCR101F | NPN Silicon Digital Transistor | Infineon |
| 253622 | BCR101FE6327 | Digital Transistors - R1= 100 kOhm ;R2= 100 kOhm | Infineon |
| 253623 | BCR101L3 | Single digital (Built-In Resistor) AF-Transistors in TSLP-3 Package | Infineon |
| 253624 | BCR101L3E6327 | Digital Transistors - R1= 100 kOhm ;R2= 100 kOhm | Infineon |
| 253625 | BCR101T | Single digital (complex) AF-Transistors in SC75 package | Infineon |
| 253626 | BCR101TE6327 | Digital Transistors - R1=100kOhm; R2=100kOhm | Infineon |
| 253627 | BCR103 | NPN Silicon Digital Transistor | Infineon |
| 253628 | BCR103F | Single digital (Built-In Resistor) AF-Transistors in TSFP-3 Package | Infineon |
| 253629 | BCR103FE6327 | Digital Transistors - R1= 2,2 kOhm ; R2= 2,2 kOhm | Infineon |
| 253630 | BCR103L3 | Single digital (Built-In Resistor) AF-Transistors in TSLP-3 Package | Infineon |
| 253631 | BCR103L3E6327 | Digital Transistors - R1= 2,2 kOhm ; R2= 2,2 kOhm | Infineon |
| 253632 | BCR103T | Single digital (complex) AF-Transistors in SC75 package | Infineon |
| 253633 | BCR103TE6327 | Digital Transistors - R1= 2,2kOhm; R2= 2,2kOhm | Infineon |
| 253634 | BCR103U | NPN Silicon Digital Transistor | Infineon |
| 253635 | BCR108 | NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit | Siemens |
| 253636 | BCR108 | Single digital (complex) AF-Transistors in SOT23 package | Infineon |
| 253637 | BCR108E6327 | Digital Transistors - R1=2.2 kOhm; R2=47kOhm | Infineon |
| 253638 | BCR108F | Single digital (Built-In Resistor) AF-Transistors in TSFP-3 Package | Infineon |
| 253639 | BCR108FE6327 | Digital Transistors - R1= 2,2 kOhm ; R2= 47 kOhm | Infineon |
| 253640 | BCR108L3 | Single digital (Built-In Resistor) AF-Transistors in TSLP-3 Package | Infineon |
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