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Datasheets found :: 1351361Page: << | 6242 | 6243 | 6244 | 6245 | 6246 | 6247 | 6248 | 6249 | 6250 | 6251 | 6252 | >>
Nr.Part NameDescriptionManufacturer by
249841BC308BUPNP Epitaxial Silicon TransistorFairchild Semiconductor
249842BC308CAmplifier Transistors(PNP)Motorola
249843BC308CPNP Epitaxial Silicon TransistorFairchild Semiconductor
249844BC308CAmplifier Transistors(PNP Silicon)ON Semiconductor
249845BC308CBUPNP Epitaxial Silicon TransistorFairchild Semiconductor
249846BC308TAPNP Epitaxial Silicon TransistorFairchild Semiconductor
249847BC308TARPNP Epitaxial Silicon TransistorFairchild Semiconductor
249848BC309Switching and Amplifier ApplicationsFairchild Semiconductor
249849BC309General Purpose TransistorKorea Electronics (KEC)
249850BC309Tranzystor małej częstotliwości małej mocyUltra CEMI
249851BC309PNP SILICON PLANAR EPITAXIAL TRANSISTORSMicro Electronics
249852BC309Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA.USHA India LTD
249853BC309APNP EPITAXIAL SILICON TRANSISTORFairchild Semiconductor
249854BC309APNP EPITAXIAL SILICON TRANSISTORFairchild Semiconductor
249855BC309A 0.350W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 120 - 220 hFEContinental Device India Limited
249856BC309ABUPNP Epitaxial Silicon TransistorFairchild Semiconductor
249857BC309ATAPNP Epitaxial Silicon TransistorFairchild Semiconductor
249858BC309BAmplifier Transistors(PNP)Motorola
249859BC309B 0.350W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 200 - 460 hFEContinental Device India Limited



249860BC309BBUPNP Epitaxial Silicon TransistorFairchild Semiconductor
249861BC309BTAPNP Epitaxial Silicon TransistorFairchild Semiconductor
249862BC309CPNP EPITAXIAL SILICON TRANSISTORFairchild Semiconductor
249863BC309CPNP EPITAXIAL SILICON TRANSISTORFairchild Semiconductor
249864BC309C 0.350W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 420 - 800 hFEContinental Device India Limited
249865BC309CBUPNP Epitaxial Silicon TransistorFairchild Semiconductor
249866BC313Tranzystor krzemowy średniej mocy, małej częstotliwościUltra CEMI
249867BC313Tranzystor małej częstotliwości małej mocyUltra CEMI
249868BC317NPN SILICON PLANAR EPITAXIAL TRANSISTORMicro Electronics
249869BC317 0.350W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.150A Ic, 110 - 450 hFEContinental Device India Limited
249870BC317A 0.350W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.150A Ic, 110 - 220 hFEContinental Device India Limited
249871BC317B 0.350W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.150A Ic, 200 - 450 hFEContinental Device India Limited
249872BC318NPN SILICON PLANAR EPITAXIAL TRANSISTORMicro Electronics
249873BC319NPN SILICON PLANAR EPITAXIAL TRANSISTORMicro Electronics
249874BC320PNP SILICON PLANAR EPITAXIAL TRANSISTORSMicro Electronics
249875BC3200Silicon-Bridge RectifiersDiotec Elektronische
249876BC321PNP SILICON PLANAR EPITAXIAL TRANSISTORSMicro Electronics
249877BC322PNP SILICON PLANAR EPITAXIAL TRANSISTORSMicro Electronics
249878BC327PNP general purpose transistorPhilips
249879BC327Switching and Amplifier ApplicationsFairchild Semiconductor
249880BC327General Purpose TransistorKorea Electronics (KEC)



Datasheets found :: 1351361Page: << | 6242 | 6243 | 6244 | 6245 | 6246 | 6247 | 6248 | 6249 | 6250 | 6251 | 6252 | >>
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