| 1538721 | T2301N | 2.5-A sensitive-gate silicon triac. Max 4 mA gate, Vdrom 800 V. | General Electric Solid State |
| 1538722 | T2302 | SENSITIVE GATE SILICON TRIACS | General Electric Solid State |
| 1538723 | T2302A | 2.5-A sensitive-gate silicon triac. Max 10 mA gate, Vdrom 100 V. | General Electric Solid State |
| 1538724 | T2302B | 2.5-A sensitive-gate silicon triac. Max 10 mA gate, Vdrom 200 V. | General Electric Solid State |
| 1538725 | T2302D | 2.5-A sensitive-gate silicon triac. Max 10 mA gate, Vdrom 400 V. | General Electric Solid State |
| 1538726 | T2302F | 2.5-A sensitive-gate silicon triac. Max 10 mA gate, Vdrom 50 V. | General Electric Solid State |
| 1538727 | T2302M | 2.5-A sensitive-gate silicon triac. Max 10 mA gate, Vdrom 600 V. | General Electric Solid State |
| 1538728 | T2302N | 2.5-A sensitive-gate silicon triac. Max 10 mA gate, Vdrom 800 V. | General Electric Solid State |
| 1538729 | T2316160A | 1024K x 16 DYNAMIC RAM FAST PAGE MODE | Taiwan Memory Technology |
| 1538730 | T2316160A | 4.5 to 5.5V; 1.2W; 1024K x 16 dynamic RAM: fast page mode | TM Technology |
| 1538731 | T2316160A-45 | 1024K x 16 DYNAMIC RAM FAST PAGE MODE | Taiwan Memory Technology |
| 1538732 | T2316160A-60 | 1024K x 16 DYNAMIC RAM FAST PAGE MODE | Taiwan Memory Technology |
| 1538733 | T2316162A | 1024K x 16 DYNAMIC RAM EDO PAGE MODE | Taiwan Memory Technology |
| 1538734 | T2316162A | 4.5 to 5.5V; 1.2W; 1024K x 16 dynamic RAM: EDO page mode | TM Technology |
| 1538735 | T2316162A-45 | 1024K x 16 DYNAMIC RAM EDO PAGE MODE | Taiwan Memory Technology |
| 1538736 | T2316162A-50 | 1024K x 16 DYNAMIC RAM EDO PAGE MODE | Taiwan Memory Technology |
| 1538737 | T2316162A-60 | 1024K x 16 DYNAMIC RAM EDO PAGE MODE | Taiwan Memory Technology |
| 1538738 | T2316405A | 4M x 4 DYNAMIC RAM EDO PAGE MODE | Taiwan Memory Technology |
| 1538739 | T2316405A | 0.5 to 4.6V; 1.0W; 4M x 4 dynamic RAM: EDO page mode | TM Technology |
|
| 1538740 | T2316405A-10 | 4M x 4 DYNAMIC RAM EDO PAGE MODE | Taiwan Memory Technology |
| 1538741 | T2316405A-50 | 4M x 4 DYNAMIC RAM EDO PAGE MODE | Taiwan Memory Technology |
| 1538742 | T2316405A-60 | 4M x 4 DYNAMIC RAM EDO PAGE MODE | Taiwan Memory Technology |
| 1538743 | T2316405A-70 | 4M x 4 DYNAMIC RAM EDO PAGE MODE | Taiwan Memory Technology |
| 1538744 | T2316407A | 4M x 4 DYNAMIC RAM EDO PAGE MODE | Taiwan Memory Technology |
| 1538745 | T2316407A | 0.5 to 4.6V; 1.0W; 4M x 4 dynamic RAM: EDO page mode | TM Technology |
| 1538746 | T2316407A-10 | 4M x 4 DYNAMIC RAM EDO PAGE MODE | Taiwan Memory Technology |
| 1538747 | T2316407A-50 | 4M x 4 DYNAMIC RAM EDO PAGE MODE | Taiwan Memory Technology |
| 1538748 | T2316407A-60 | 4M x 4 DYNAMIC RAM EDO PAGE MODE | Taiwan Memory Technology |
| 1538749 | T2316407A-70 | 4M x 4 DYNAMIC RAM EDO PAGE MODE | Taiwan Memory Technology |
| 1538750 | T2320 | 2.5-A SENSITIVE GATE SILICON TRIACS | General Electric Solid State |
| 1538751 | T2320A | 2.5-A SENSITIVE GATE SILICON TRIACS | General Electric Solid State |
| 1538752 | T2320B | 2.5-A SENSITIVE GATE SILICON TRIACS | General Electric Solid State |
| 1538753 | T2320D | 2.5-A SENSITIVE GATE SILICON TRIACS | General Electric Solid State |
| 1538754 | T2320E | 2.5-A SENSITIVE GATE SILICON TRIACS | General Electric Solid State |
| 1538755 | T2320M | 2.5-A SENSITIVE GATE SILICON TRIACS | General Electric Solid State |
| 1538756 | T2320N | 2.5-A SENSITIVE GATE SILICON TRIACS | General Electric Solid State |
| 1538757 | T2322 | SENSITIVE GATE TRIACs 2.5 AMPERES RMS 200 thru 600 VOLTS | Motorola |
| 1538758 | T2322 | Sensitive Gate Triacs | ON Semiconductor |
| 1538759 | T2322-D | Sensitive Gate Triacs | ON Semiconductor |
| 1538760 | T2322A | 2.5-A SENSITIVE GATE SILICON TRIACS | General Electric Solid State |
