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Datasheets found :: 1726161
Page: << | 30114 | 30115 | 30116 | 30117 | 30118 | 30119 | 30120 | 30121 | 30122 | 30123 | 30124 | >>
No.Part NameDescriptionManufacturer
1204721MRF9085LSR3880 MHz, 90 W, 26 V Lateral N–Channel RF Power MOSFETFreescale (Motorola)
1204722MRF9085LSR3880 MHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETsMotorola
1204723MRF9100MRF9100, MRF9100R3, MRF9100SR3 GSM/EDGE 900 MHz, 110 W, 26 V Lateral N-Channel RF Power MOSFETsMotorola
1204724MRF9100R3GSM/EDGE 900 MHz, 110 W, 26 V Lateral N–Channel RF Power MOSFETFreescale (Motorola)
1204725MRF9100R3GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETsMotorola
1204726MRF9100SR3GSM/EDGE 900 MHz, 110 W, 26 V Lateral N–Channel RF Power MOSFETFreescale (Motorola)
1204727MRF9100SR3GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETsMotorola
1204728MRF911NPN silicon high frequency transistor fT=5.0GHz/30mAMotorola
1204729MRF9120MRF9120, MRF9120S 880 MHz, 120 W, 26 V Lateral N-Channel RF Power MOSFETsMotorola
1204730MRF9120LR3RF Power Field Effect TransistorsMotorola
1204731MRF9120R3880 MHz, 120 W, 26 V Lateral N-Channel RF Power MOSFETFreescale (Motorola)
1204732MRF9120R3RF Power Field Effect TransistorsMotorola
1204733MRF9130LMRF9130L, MRF9130LR3, MRF9130LSR3 GSM/EDGE 921-960 MHz, 130 W, 28 V Lateral N-Channel RF Power MOSFETsMotorola
1204734MRF9130LR3GSM/EDGE 921–960 MHz, 130 W, 28 V Lateral N–Channel RF Power MOSFETFreescale (Motorola)
1204735MRF9130LR3RF Power Field Effect TransistorsMotorola
1204736MRF9130LSR3GSM/EDGE 921–960 MHz, 130 W, 28 V Lateral N–Channel RF Power MOSFETFreescale (Motorola)
1204737MRF9130LSR3RF Power Field Effect TransistorsMotorola
1204738MRF9135LMRF9135L, MRF9135LR3, MRF9135LSR3 880 MHz, 135 W, 26 V Lateral N-Channel RF Power MOSFETsMotorola
1204739MRF9135LR3880 MHz, 135 W, 26 V Lateral N–Channel RF Power MOSFETFreescale (Motorola)


1204740MRF9135LR3RF POWER FIELD EFFECT TRANSISTORSMotorola
1204741MRF9135LSR3880 MHz, 135 W, 26 V Lateral N–Channel RF Power MOSFETFreescale (Motorola)
1204742MRF9135LSR3RF POWER FIELD EFFECT TRANSISTORSMotorola
1204743MRF914RF & MICROWAVE DISCRETE LOW POWER TRANSISTORSMicrosemi
1204744MRF914NPN silicon high frequency transistor fT=4.5GHz/20mAMotorola
1204745MRF914Trans GP BJT NPN 12V 0.04A 4-Pin TO-72New Jersey Semiconductor
1204746MRF917T1LOW NOISE HIGH FREQUENCY TRANSISTORMotorola
1204747MRF9180MRF9180, MRF9180S 880 MHz, 170 W, 26 V Lateral N-Channel RF Power MOSFETsMotorola
1204748MRF9180R6880 MHz, 170 W, 26 V Lateral N–Channel RF Power MOSFETFreescale (Motorola)
1204749MRF9180S880 MHz, 170 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETsMotorola
1204750MRF9200LR3N−Channel Enhancement−Mode Lateral MOSFETsFreescale (Motorola)
1204751MRF9200LR3880 Mhz; 40W; V(dss): -0.5 to +65V; RF power field effect transistorMotorola
1204752MRF9200LSR3N−Channel Enhancement−Mode Lateral MOSFETsFreescale (Motorola)
1204753MRF9200LSR3880 Mhz; 40W; V(dss): -0.5 to +65V; RF power field effect transistorMotorola
1204754MRF9210MRF9210 880 MHz, 200 W, 26 V Lateral N-Channel RF Power MOSFETMotorola
1204755MRF9210R3880 MHz, 200 W, 26 V Lateral N–Channel Broadband RF Power MOSFETFreescale (Motorola)
1204756MRF9210R3RF Power Field Effect TransistorMotorola
1204757MRF927T1LOW NOISE HIGH FREQUENCY TRANSISTORMotorola
1204758MRF927T3LOW NOISE HIGH FREQUENCY TRANSISTORMotorola
1204759MRF931NPN silicon high frequency transistor, low currentMotorola
1204760MRF9331Surface mounted NPN silicon high frequency transistorMotorola


Datasheets found :: 1726161
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