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Datasheets found :: 1726161
Page: << | 29498 | 29499 | 29500 | 29501 | 29502 | 29503 | 29504 | 29505 | 29506 | 29507 | 29508 | >>
No.Part NameDescriptionManufacturer
1180081MJE2955TSILICON EPITAXIAL PLANAR TRANSISTORWing Shing Computer Components
1180082MJE2955TPNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)Wing Shing Computer Components
1180083MJE2955T-DComplementary Silicon Plastic Power TransistorsON Semiconductor
1180084MJE2955TTUPNP Silicon TransistorFairchild Semiconductor
1180085MJE3055TO-220 Plastic-Encapsulate Biploar TransistorsMicro Commercial Components
1180086MJE305510 Ampere NPN Power Transistor 60 Volts, 90 Watts, plastic version of 2N3055, complementary to MJE2955Motorola
1180087MJE305510 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 75 WATTSMotorola
1180088MJE3055COMPLEMENTARY SILICON POWER TRANSISTORSST Microelectronics
1180089MJE3055SILICON EPITAXIAL PLANAR TRANSISTORWing Shing Computer Components
1180090MJE3055TLeaded Power Transistor General PurposeCentral Semiconductor
1180091MJE3055TNPN Plastic Power TransistorContinental Device India Limited
1180092MJE3055TNPN Silicon TransistorFairchild Semiconductor
1180093MJE3055TPOWER TRANSISTORS(10A,60V,75W)MOSPEC Semiconductor
1180094MJE3055T10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 75 WATTSMotorola
1180095MJE3055TTrans GP BJT NPN 60V 10A 3-Pin(3+Tab) TO-220 TubeNew Jersey Semiconductor
1180096MJE3055TPower 10A 60V Discrete NPNON Semiconductor
1180097MJE3055T70 V, 10 A, NPN silicon transistorSamsung Electronic
1180098MJE3055TSilicon NPN Power Transistors TO-220 packageSavantic
1180099MJE3055TCOMPLEMENTARY SILICON POWER TRANSISTORSSGS Thomson Microelectronics


1180100MJE3055TCOMPLEMENTARY SILICON POWER TRANSISTORSSGS Thomson Microelectronics
1180101MJE3055TCOMPLEMENTARY SILICON POWER TRANSISTORSST Microelectronics
1180102MJE3055TNPN, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo(sus) = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc, Ic = 10Adc, Pd = 75W.USHA India LTD
1180103MJE3055TSILICON EPITAXIAL PLANAR TRANSISTORWing Shing Computer Components
1180104MJE3055TTUNPN Silicon TransistorFairchild Semiconductor
1180105MJE340Leaded Power Transistor General PurposeCentral Semiconductor
1180106MJE340 20.000W High Voltage NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - 240 hFE. Complementary MJE350Continental Device India Limited
1180107MJE340NPN Epitaxial Silicon TransistorFairchild Semiconductor
1180108MJE340NPN silicon power transistor designed for power output stages for television, radio, phonograph and other consumer product applicationsMotorola
1180109MJE3400.5 AMPERE POWER TRANSISTOR NPN SILICON 300 VOLTS 20 WATTSMotorola
1180110MJE340Plastic Medium Power NPN Silicon TransistorON Semiconductor
1180111MJE340300 V, 500 A, NPN epitaxial silicon transistorSamsung Electronic
1180112MJE340Silicon NPN Power Transistors TO-126 packageSavantic
1180113MJE340COMPLEMETARY SILICON POWER TRANSISTORSSGS Thomson Microelectronics
1180114MJE340COMPLEMENTARY SILICON POWER TRANSISTORSSGS Thomson Microelectronics
1180115MJE340COMPLEMENTARY SILICON POWER TRANSISTORSST Microelectronics
1180116MJE340-DPlastic Medium Power NPN Silicon TransistorON Semiconductor
1180117MJE340STUNPN Epitaxial Silicon TransistorFairchild Semiconductor
1180118MJE341Leaded Power Transistor General PurposeCentral Semiconductor
1180119MJE3410.5 AMPERE POWER TRANSISTORS NPN SILICON 150-200 VOLTS 20 WATTSMotorola
1180120MJE341Trans GP BJT NPN 150V 0.5A 3-Pin TO-126New Jersey Semiconductor


Datasheets found :: 1726161
Page: << | 29498 | 29499 | 29500 | 29501 | 29502 | 29503 | 29504 | 29505 | 29506 | 29507 | 29508 | >>


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