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Datasheets found :: 1351361Page: << | 29148 | 29149 | 29150 | 29151 | 29152 | 29153 | 29154 | 29155 | 29156 | 29157 | 29158 | >>
Nr.Part NameDescriptionManufacturer by
1166081STH6N100OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSGS Thomson Microelectronics
1166082STH6N100FIOLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INST Microelectronics
1166083STH6N100FIN - CHANNEL ENHANCEMENT MODE, POWER MOS TRANSISTORSGS Thomson Microelectronics
1166084STH6N100FIOLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSGS Thomson Microelectronics
1166085STH6NA80FIOLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INST Microelectronics
1166086STH6NA80FIN - CHANNEL 800V - 1.8 Ohm - 5.4A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTORSGS Thomson Microelectronics
1166087STH6NA80FIOLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSGS Thomson Microelectronics
1166088STH7NA100FIOLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INST Microelectronics
1166089STH7NA100FIN - CHANNEL ENHANCEMENT MODE, POWER MOS TRANSISTORSSGS Thomson Microelectronics
1166090STH7NA100FIOLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSGS Thomson Microelectronics
1166091STH7NA80N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORST Microelectronics
1166092STH7NA80N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORST Microelectronics
1166093STH7NA80FIOLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INST Microelectronics
1166094STH7NA80FIN - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORSGS Thomson Microelectronics
1166095STH7NA80FIOLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSGS Thomson Microelectronics
1166096STH7NA90FIOLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INST Microelectronics
1166097STH7NA90FIN - CHANNEL 900V - 1.05 Ohm - 7A - TO-247/ISOWATT218 FAST POWER MOSFETSGS Thomson Microelectronics
1166098STH7NA90FIOLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSGS Thomson Microelectronics
1166099STH80N10F7-2N-channel 100 V, 0.008 Ohm typ., 80 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in H2PAK-2 packageST Microelectronics



1166100STH81002Z1550nm Laser in Coaxial TO-PackageSiemens
1166101STH81002Z1550nm Laser in Coaxial TO-PackageSiemens
1166102STH8N80N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSST Microelectronics
1166103STH8N80FIN-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSST Microelectronics
1166104STH8N80FIN-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSST Microelectronics
1166105STH8NA60FIOLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INST Microelectronics
1166106STH8NA60FIN - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORSGS Thomson Microelectronics
1166107STH8NA60FIOLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSGS Thomson Microelectronics
1166108STH8NA80FIOLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INST Microelectronics
1166109STH8NA80FIN - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSSGS Thomson Microelectronics
1166110STH8NA80FIOLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSGS Thomson Microelectronics
1166111STH8NB90FIN-CHANNEL 900V - 1.1 OHM - 8A - TO-247/ISOWATT218 POWERMESH MOSFETST Microelectronics
1166112STH8NB90FIN-CHANNEL 900V - 1.1 OHM - 8A - TO-247/ISOWATT218 POWERMESH MOSFETSGS Thomson Microelectronics
1166113STH9NA60FIOLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INST Microelectronics
1166114STH9NA60FIN - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORSGS Thomson Microelectronics
1166115STH9NA60FIOLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSGS Thomson Microelectronics
1166116STH9NA80N - CHANNEL 800V - 0.85ohm - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTORST Microelectronics
1166117STH9NA80N - CHANNEL 800V - 0.85ohm - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTORST Microelectronics
1166118STH9NA80FIOLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INST Microelectronics
1166119STH9NA80FIN - CHANNEL 800V - 0.85Ohm - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTORSGS Thomson Microelectronics
1166120STH9NA80FIOLD PRODUCT: NOT SUITABLE F PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSGS Thomson Microelectronics



Datasheets found :: 1351361Page: << | 29148 | 29149 | 29150 | 29151 | 29152 | 29153 | 29154 | 29155 | 29156 | 29157 | 29158 | >>
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