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Datasheets found :: 1351361Page: << | 29108 | 29109 | 29110 | 29111 | 29112 | 29113 | 29114 | 29115 | 29116 | 29117 | 29118 | >>
Nr.Part NameDescriptionManufacturer by
1164481STD95NH02L-1N-CHANNEL 24V - 0.0039 Ohm - 80A DPAK ULTRA LOW GATE CHARGE STripFET MOSFETST Microelectronics
1164482STD95NH02LT4N-CHANNEL 24V - 0.0039 Ohm - 80A DPAK ULTRA LOW GATE CHARGE STripFET MOSFETST Microelectronics
1164483STD96N3LLH6N-channel 30 V, 0.0037 Ohm typ., 80 A, in DPAK STripFET(TM) VI DeepGATE(TM) Power MOSFETST Microelectronics
1164484STD9N10OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INST Microelectronics
1164485STD9N10OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSGS Thomson Microelectronics
1164486STD9N10N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSGS Thomson Microelectronics
1164487STD9N10-1N-CHANNEL 100V - 0.23 & - 9A DPAK/IPAK MOSFET TRANSISTORST Microelectronics
1164488STD9N10LOLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INST Microelectronics
1164489STD9N10LOLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSGS Thomson Microelectronics
1164490STD9N10LN - CHANNEL 100V - 0.22Ohm - 9A IPAK/DPAK POWER MOS TRANSISTORSGS Thomson Microelectronics
1164491STD9N40M2N-channel 400 V, 0.65 Ohm typ., 6 A MDmesh II Plus(TM) low Qg Power MOSFET in DPAK packageST Microelectronics
1164492STD9N60M2N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh II Plus(TM) low Qg Power MOSFET in DPAK packageST Microelectronics
1164493STD9N65M2N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in DPAK packageST Microelectronics
1164494STD9NM40NN-channel 400 V, 0.73 Ohm typ., 5.6 A MDmesh(TM) II Power MOSFET in a DPAK packageST Microelectronics
1164495STD9NM50NN-channel 500 V, 0.73 Ohm, 5 A MDmesh(TM) II Power MOSFET in DPAKST Microelectronics
1164496STD9NM60NN-channel 600 V, 0.63 Ohm, 6.5 A DPAK MDmesh(TM) II Power MOSFETST Microelectronics
1164497STDD15LOW CAPACTITANCE DETECTION DIODEST Microelectronics
1164498STDD15-04WLOW CAPACTITANCE DETECTION DIODEST Microelectronics



1164499STDD15-04WFILMLOW CAPACTITANCE DETECTION DIODEST Microelectronics
1164500STDD15-05WLOW CAPACTITANCE DETECTION DIODEST Microelectronics
1164501STDD15-05WFILMLOW CAPACTITANCE DETECTION DIODEST Microelectronics
1164502STDD15-07PLOW CAPACITANCE DETECTION DIODEST Microelectronics
1164503STDD15-07P6LOW CAPACITANCE DETECTION DIODEST Microelectronics
1164504STDD15-07SLOW CAPACTITANCE DETECTION DIODEST Microelectronics
1164505STDD15-07SFILMLOW CAPACTITANCE DETECTION DIODEST Microelectronics
1164506STDELIVORDERING INFORMATION FOR PACKAGE AND DELIVERYST Microelectronics
1164507STDELIVORDERING INFORMATION FOR PACKAGE AND DELIVERYSGS Thomson Microelectronics
1164508STDH150 ASICI/O CellsSamsung Electronic
1164509STDH150 ASICI/O IP CellsSamsung Electronic
1164510STDH150 ASICPrimitive LatchesSamsung Electronic
1164511STDH150 ASICHigh Density MemoriesSamsung Electronic
1164512STDH150 ASICPrimitive Flip/FlopsSamsung Electronic
1164513STDH150 ASICPrimitive Logic CellsSamsung Electronic
1164514STDH150 ASICMaximum FanoutsSamsung Electronic
1164515STDH150 ASICPrimitive OverviewSamsung Electronic
1164516STDH150 ASICPrimitive MiscellaniesSamsung Electronic
1164517STDH150 ASICInput / Output CellsSamsung Electronic
1164518STDH150 ASICCharacteristicsSamsung Electronic
1164519STDH150 ASICIntroductionSamsung Electronic
1164520STDH150 ASICSTDH150 BrochureSamsung Electronic



Datasheets found :: 1351361Page: << | 29108 | 29109 | 29110 | 29111 | 29112 | 29113 | 29114 | 29115 | 29116 | 29117 | 29118 | >>
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