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Datasheets found :: 1675338
Page: << | 28436 | 28437 | 28438 | 28439 | 28440 | 28441 | 28442 | 28443 | 28444 | 28445 | 28446 | >>
No.Part NameDescriptionManufacturer
1137601MJ21193-DSilicon Power TransistorsON Semiconductor
1137602MJ21194Silicon power transistorMotorola
1137603MJ21194Power 16A 250V NPNON Semiconductor
1137604MJ21194Silicon NPN Power Transistors TO-3 packageSavantic
1137605MJ21195Power,16A,250V,PNPON Semiconductor
1137606MJ21195-DSilicon Power TransistorsON Semiconductor
1137607MJ21196Power,16A,250V,NPNON Semiconductor
1137608MJ219416 ampere complementary silicon power transistors 250 volts 250 wattsMotorola
1137609MJ2253Bipolar PNP Device in a Hermetically sealed TO66 Metal Package.SemeLAB
1137610MJ2400Inrush current controllerShindengen
1137611MJ2400Power ICs / Inrush Current Controllers (MJ Series)Shindengen
1137612MJ250060V silicon epitaxial-base darlingtonComset Semiconductors
1137613MJ250010 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.80 VOLTS 150 WATTSMotorola
1137614MJ2500MEDIUMPOWER TRANSISTORS COMPLEMENTARY SILICONNew Jersey Semiconductor
1137615MJ2500Silicon PNP Power Transistors TO-3 packageSavantic
1137616MJ2500DMEDIUMPOWER TRANSISTORS COMPLEMENTARY SILICONNew Jersey Semiconductor
1137617MJ250180V silicon epitaxial-base darlingtonComset Semiconductors
1137618MJ2501Medium-power complementary silicon transistorMotorola
1137619MJ2501Trans Darlington PNP 80V 10A 3-Pin(2+Tab) TO-3 SleeveNew Jersey Semiconductor


1137620MJ2501Medium-Power Complementary Silicon TransistorsON Semiconductor
1137621MJ2501Silicon PNP Power Transistors TO-3 packageSavantic
1137622MJ2501COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORSSGS Thomson Microelectronics
1137623MJ2501COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORSSGS Thomson Microelectronics
1137624MJ2501COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORSST Microelectronics
1137625MJ2501-DMedium-Power Complementary Silicon TransistorsON Semiconductor
1137626MJ281232 WORDS X 8 BIT FIFO MEMORYZarlink Semiconductor
1137627MJ2955COMPLEMENTARY SILICON POWER TRANSISTORSBoca Semiconductor Corporation
1137628MJ2955Leaded Power Transistor General PurposeCentral Semiconductor
1137629MJ2955 115.000W Power PNP Metal Can Transistor. 60V Vceo, 15.000A Ic, 5 hFE.Continental Device India Limited
1137630MJ2955Silicon P-N-P epitaxial-base high-power transistor. -100V, 150W.General Electric Solid State
1137631MJ2955POWER TRANSISTORS(15A,50V,115W)MOSPEC Semiconductor
1137632MJ2955Complementary silicon power transistorMotorola
1137633MJ2955Power 15A 60V Discrete PNPON Semiconductor
1137634MJ2955Silicon PNP Power Transistors TO-3 packageSavantic
1137635MJ2955COMPLEMENTARY SILICON POWER TRANSISTORSSGS Thomson Microelectronics
1137636MJ2955COMPLEMENTARY SILICON POWER TRANSISTORSSGS Thomson Microelectronics
1137637MJ2955COMPLEMENTARY SILICON POWER TRANSISTORSST Microelectronics
1137638MJ2955PNP High power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc Ic = 15Adc, PD = 115W.USHA India LTD
1137639MJ2955PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)Wing Shing Computer Components
1137640MJ2955ACOMPLEMENTARY SILICON HIGH-POWER TRANSISTORSBoca Semiconductor Corporation


Datasheets found :: 1675338
Page: << | 28436 | 28437 | 28438 | 28439 | 28440 | 28441 | 28442 | 28443 | 28444 | 28445 | 28446 | >>


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