No. | Part Name | Description |
51 | 2N6200 | B40-28 40 WATTS - 28 VOLTS 100-200 MHZ |
52 | 3001 | MICROWAVE CW BIPOLAR |
53 | 3001-2 | 1 W, 28 V, 3 GHz, microwave CW bipolar |
54 | 3003 | 3 W, 28 V, 3 GHz, microwave CW bipolar |
55 | 3003-2 | 3 W, 28 V, 3 GHz, microwave CW bipolar |
56 | 3003-3 | 3 W, 28 V, 3 GHz, microwave CW bipolar |
57 | 3005 | 5 W, 28 V, 3 GHz, microwave CW bipolar |
58 | 3005-2 | 5 W, 28 V, 3 GHz, microwave CW bipolar |
59 | 3005-3 | 5 W, 28 V, 3 GHz, microwave CW bipolar |
60 | 46100 | 1 W, 28 V, 960 MHz, UHF emitter transistor |
61 | 46100-2 | 1 W, 28 V, 960 MHz, UHF emitter transistor |
62 | 46100-3 | 1 W, 28 V, 960 MHz, UHF emitter transistor |
63 | 46101 | 1 W, 28 V, 960 MHz, UHF emitter transistor |
64 | 46104 | 4 W, 28 V, 1000 MHz, UHF emitter transistor |
65 | 46104-2 | 4 W, 28 V, 1000 MHz, UHF emitter transistor |
66 | 46110 | 10 W, 28 V, 1000 MHz, UHF emitter transistor |
67 | 46110-2 | 10 W, 28 V, 1000 MHz, UHF emitter transistor |
68 | 46120 | 20 W, 28 V, 1000 MHz, UHF emitter transistor |
69 | 46120-2 | 20 W, 28 V, 1000 MHz, UHF emitter transistor |
70 | B3-12 | LAND MOBILE |
71 | B3-28 | Specifically Designed for VHF Broadband Linear Power Amplifier |
72 | BAM20 | 20 WATTS - 27 VOLTS 100-160 MHz |
73 | BM80-12 | LAND MOBILE |
74 | C50-28 | 50 WATTS - 28VOLTS 200-450 MHZ |
75 | C50-28-3 | 50 WATTS - 28VOLTS 200-450 MHZ |
76 | DME150 | 150 W, 50 V all devices utilize the most advanced design and process technologies, there features provide the most consistent and reliable chip |
77 | DME150-2 | 150 W, 50 V all devices utilize the most advanced design and process technologies, there features provide the most consistent and reliable chip |
78 | DME150-3 | 150 W, 50 V all devices utilize the most advanced design and process technologies, there features provide the most consistent and reliable chip |
79 | DME375 | 375 W, 50 V internally matched, common base transistor |
80 | DME375A | 375 W, 50 V internally matched, common base transistor |
81 | DME375A-2 | 375 W, 50 V internally matched, common base transistor |
82 | DME375A-3 | 375 W, 50 V internally matched, common base transistor |
83 | DME500 | 500 W, 50 V all devices utilize the most advanced design and process technologies, there features provide the most consistent and reliable chip |
84 | DME500-2 | 500 W, 50 V all devices utilize the most advanced design and process technologies, there features provide the most consistent and reliable chip |
85 | DME500-3 | 500 W, 50 V all devices utilize the most advanced design and process technologies, there features provide the most consistent and reliable chip |
86 | DMEG250 | 250 W, 50 V all devices utilize the most advanced design and process technologies, there features provide the most consistent and reliable chip |
87 | DMEG250-2 | 250 W, 50 V all devices utilize the most advanced design and process technologies, there features provide the most consistent and reliable chip |
88 | DMEG250-3 | 250 W, 50 V all devices utilize the most advanced design and process technologies, there features provide the most consistent and reliable chip |
89 | FM150 | 150 W, 28 V, 88-108 MHz, VHF FM broadcast band |
90 | FM150-2 | 150 W, 28 V, 88-108 MHz, VHF FM broadcast band |
91 | LDR100SB | 100 WATTS 36 VOLTS |
92 | LDR100SB-2 | 100 W, 36 V, 1200/1400 MHz, L-band radar |
93 | LDR100SB-3 | 100 W, 36 V, 1200/1400 MHz, L-band radar |
94 | MPA201 | Hybird Amplifier |
95 | MPA202 | Hybird Amplifier |
96 | S100-12 | 100 W, 12.5 V, 1.5-30 MHz, HF communication |
97 | S100-12-2 | 100 W, 12.5 V, 1.5-30 MHz, HF communication |
98 | S100-12-3 | 100 W, 12.5 V, 1.5-30 MHz, HF communication |
99 | S100-28 | 100 W, 28 V, 30 MHz, HF communication |
100 | S100-28-2 | 100 W, 28 V, 30 MHz, HF communication |
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